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 AWT6123 GSM850/GSM900/DCS/PCS Quad Band Power Amplifier
Advanced Product Information Rev 0.7
FEATURES
* * * * * * * * * * InGaP HBT Technology +35dBm GSM Output Power at 3.5V +32.5dBm DCS/PCS Output Power at 3.5V 35% GSM850 PAE (Class 5) 50% GSM850 PAE (Class 4) 55% GSM900 PAE 50% DCS/PCS PAE Low Profile 1.4mm Package Small footprint 6 x 8mm SMT Package GPRS Capable (class 12)
PRODUCT DESCRIPTION
ANADIGICS is introducing two 3-stage power amplifiers designed for high performance in Quad Band Applications. The amplifiers are packaged in a very small 6 x 8mm module. The output power is controlled by changing the voltage applied to the VAPC pin for each amplifier. The part is shut down by removing the regulated supply voltage. The amplifier is manufactured using an advanced InGaP HBT technology, offering state of the art reliability, temperature stability and ruggedness. Passive matching networks are integrated to provide internal matching to 50 at both the RF inputs and outputs. Internal DC blocks are provided at the RF inputs.
APPLICATIONS
GSM850/GSM900/DCS/PCS Handsets Dual/Tri/Quad Band PDA
DCS/PCS_IN
DCS/PCS_OUT
VCCA_DCS/PCS VAPC_DCS/PCS VREG_DCS/PCS VAPC_GSM VREG_GSM VCCA_GSM
DCS/PCS Bias GSM Bias
VCCB
GSM_IN
GSM_OUT
Figure 1: Block Diagram
02-2003
AWT6123
ELECTRICAL CHARACTERISTICS
Table 1: Absolute Maximum Ratings
PARAMETER Supply Voltage (VCC) RF Input Power (RFIN) Control Voltage (VAPC) Storage T emperature (TSTG)
MIN
MAX +7 +14 3.0
UNITS V dBm V C
-55
150
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.
Table 2: ESD Ratings
PARAMETER ESD threshold voltage (RF ports) ESD threshold voltage (control inputs) ESD threshold voltage (RF inputs) ESD threshold voltage (control inputs)
METHOD HBM HBM CDM CDM
RATING 250 250 TBD TBD
UNITS V V V V
Table 3: Operating Conditions
PARAMETER
Supply voltage (VCC) Regulated voltage (VREG) Individual Regulated current (IREG) Control voltage (VAPC) Control Voltage (VAPC) for max power
CONDITIONS
MIN
3.0 2.7
TYP
3.5 2.8 3.5
MAX
4.2 3.0 4.5 VREG
UNITS
V V mA V V mA
VREG_GSM or VREG_DCS/PCS = 3.0V 0.45
1.8 VAPC = 0.45V -3
2.2
Individual Control current (IAPC) See Note 1
VAPC = 2.2V VAPC = 3.0V
3 6 0 -20 10 85
mA mA
Leakage current
VCC = 4.2V, No RF Applied VREG_GSM = VREG_DCS/PCS = 0V
A
Case temperature (TC)
C
Note 1: The VAPC must be pulled down to 0.45V with a low impedance. If VREG_GSM & VREG_DCS/PCS inputs are connected then both VAPC inputs must be pulled down to 0.45V to disable both power amplifiers. 2
Advanced Product Information - Rev 0.7 02-2003
AWT6123 Figure 3: Application Block Diagram For Single Output Power Control
DCS/PCS_IN DCS/PCS_OUT
VAPC_DCS/PCS VCCA_DCS/PCS Reg
EN_A
VREG_DCS/PCS ~3.5mA ~3.5mA V REG_GSM V CCA_GSM VAPC_GSM
DCS/PCS Bias
VCCB To Filter/ Switch
Reg
EN_B
GSM Bias
GSM_IN
GSM _OUT
BAND GSM800/900 DCS/PCS
EN_A OFF ON
EN_B ON OFF
Power Control IC -3.0 to +3.0mA
Vramp
Figure 4: Application Block Diagram For Dual Output Power Control
DCS/PCS_IN DCS/PCS_OUT To Filter/ Switch VAPC_DCS/PCS VCCA_DCS/PCS Reg
EN
DCS/PCS Bias
VREG_DCS/PCS VREG_GSM
~7mA V CCA_GSM VAPC_GSM
VCCB
GSM Bias
GSM _IN
GSM_OUT
To Filter/ Switch
Power Control IC -3.0 to +3.0mA
-3.0 to +3.0mA
Vramp
Note: Power control outputs need to sink current to power down each power amplifier
Advanced Product Information - Rev 0.7 02-2003
3
AWT6123 Table 4: Electrical Characteristics for GSM850/900
Unless otherwise specified:VCC = 3.5V, PIN = 5.5dBm, VREG_GSM = 2.8V, VAPC_GSM = 2.2V, ZIN = ZOUT = 50, TC = 25 C VREG_DCS/PCS = VAPC_DCS/PCS = 0V, Pulse Width =1154s
PARAMETER Operating Frequency Input Power GSM850 Band (824 to 849MHz) Output Power Efficiency GSM850 Class 4 Efficiency GSM850 Class 5 Degraded Output Power GSM900 Band (880 to 915MHz) Output Power Efficiency GSM900 Class 4 Degraded Output Power All Bands Isolation Cross Isolation Harmonics (2-14F) Stability
SYMBOL FIN PIN
CONDITIONS
MIN 824 880 3
TYP
MAX 849 915
UNIT MHz MHz dBm
5.5
8
PMAX PAE PAE POUT = PMAX POUT = 31.5dBm VCC = 3.0V, VREG = 2.7V, TC = 85C, PIN = 3dBm
34.5 45
35 50 35
dBm % % dBm
32.5
PMAX PAE POUT = PMAX VCC = 3.0V, VREG = 2.7V, TC = 85C, PIN = 3dBm
34.5 50 32.5
35 55
dBm % dBm
VAPC = 0.45V, PIN = 8dBm 2*FIN at DCS/PCS_OUT port, DCS/PCS PA = OFF VAPC = 0.45 to 2.2V All VAPC, All VCC, All VREG, TC = -20 to 85C, VSWR = 8:1 All phases All VAPC, All VCC, All VREG, TC = -20 to 85C, All phases RBW=VBW=100kHz, PIN = 3.0 to 8dBm, FIN = 915MHz, FOUT = FIN + 10 to 20MHz 10:1
-35
-30 -20
dBm dBm dBm dBm
-12
-7 -36
Ruggedness
ratio
-70
dBm
RX Band Noise Power RBW=VBW=100kHz, PIN = 3.0 to 8dBm, FIN = 849 or 915MHz, FOUT = FIN + 20 to 45MHz Input Return Loss POUT = 5dBm to PMAX -82 dBm
2.5:1
4
Advanced Product Information - Rev 0.7 02-2003
AWT6123 Table 5: Electrical Characteristics for DCS/PCS
Unless otherwise specified: VCC = 3.5V, PIN = 5.5dBm, VREG_DCS/PCS = 2.8V, VAPC_DCS/PCS = 2.2V, ZIN = ZOUT = 50, TC = 25 C VREG_GSM = VAPC_GSM = 0V, Pulse Width =1154s
PARAMETER Operating Frequency Input Power Output Power
SYMBOL FIN PIN
CONDITIONS
MIN 1710 1850 3
TYP
MAX 1785 1910
UNIT MHz MHz dBm dBm dBm dBm
5.5 32.5 32.5
8
FIN = 1710 to 1785MHz PMAX FIN = 1850 to 1910MHz VCC = 3.0V, VREG = 2.7V, TC = 85C FIN = 1710 to 1785MHz VCC = 3.0V, VREG = 2.7V, TC = 85C FIN = 1880 to 1910MHz Efficiency (POUT =PMAX) Isolation Harmonics (2-7F) Stability FIN = 1710 to 1910MHz VAPC = 0.45V, PIN = 8dBm VAPC = 0.45 to 2.2V All VAPC, All VCC, All VREG, TC = -20 to 85C, VSWR = 8:1 All phases All VAPC, All VCC, All VREG, TC = -20 to 85C, All phases RBW=VBW=100kHz, PIN = 3.0 to 8.0dBm, FIN = 1785 or 1910MHz, FOUT = FIN + 20 to 95MHz POUT = 0dBm to PMAX
32.0 32.0 29.5
Degraded Output Power
29.5
dBm
45
50 -35 -12 -30 -7 -36
% dBm dBm dBm
Ruggedness
10:1
ratio
RX Band Noise Power
-80
-74
dBm
Input Return Loss
2.5:1
Advanced Product Information - Rev 0.7 02-2003
5
AWT6123
TYPICAL PERFORMANCE CHARACTERISTICS
GSM850/900 Pout vs Vapc 2TX slots
40 35 30 25 20 15
Pout (dBm)
10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 0.8 0.9 1.0 1.1 1.2 1.3 1 .4 1 .5 1 .6
Vcc = 3.5V, Tempc = +25C, PW = 1154us, Pin = 5.5dBm
836.5MHz 897.5MHz
1.7
1.8
1.9
2.0
2 .1
2 .2
Vapc (V)
Figure 5:GSM850/900 Pout vs Vapc
DCS/PCS POUT vs Vapc 2TX slots
35 30 25 20 15
VCC =3.5V, Pin = 5.5dBm, Temp = +25C, PW = 1154us
Pout(dBm)
10 5 0 -5 -10 -15 -20 -25 -30 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0
1880MHz 1747.5MHz
Vapc(V)
Figure 6:DCS/PCS Pout vs Vapc
6
Advanced Product Information - Rev 0.7 02-2003
AWT6123
TYPICAL PERFORMANCE CHARACTERISTICS
GSM850/900 PMAX & PAE @ 3.5V
37.0 36.8 36.6 36.4 36.2 36.0 70
Pout
PAE
P in = +5.5 dBm, Vreg = 2.8V Temp. = + 25C
68 66 64 62 60 58 56 54 52 50 48 46 44 42
Pout (dBm)
35.8 35.6 35.4 35.2 35.0 34.8 34.6 34.4 34.2 34.0 820 830 840 850 860 870 880 890 900 910
40 920
Frequency (MHz)
Figure 7: GSM850/900PMAX & PAE vs Frequency
DCS/PCS PMAX & PAE @ 3.5V
34.0 33.8 33.6 33.4 33.2 33.0 60
Pout
PAE
Pin = +5.5 dBm, Vreg = 2.8V Temp. = + 25C
59 58 57 56 55 54 53 52 51 50 49 48 47 46
32.8 32.6 32.4 32.2 32.0 31.8 31.6 31.4 31.2 31.0 1700 1720 1740 1760 1780 1800 1820 1840 1860 1880 1900
45 1920
Frequency (M H z )
Figure 8: DCS/PCS PMAX & PAE vs Frequency
Advanced Product Information - Rev 0.7 02-2003
Power Added Efficiency (%)
Pout (dBm)
Power Added Efficiency (%)
7
AWT6123 Figure 4: Package Outline (X-Ray View)
P22 P21 P20 P19 P18 P17
P1 P2 P3 P4 P5
P16 P15 P14 P13 P12
P6
P7
P8
P9
P10
P11
TOP VIEW (X-RAY)
Table 6: Pin Description
PIN 1 2 3 4 5 6 7 8 9 10 11 NAME DCS/PCS_IN VAPC_
DCS/PCS
DESCRIPTION DCS/PCS RF Input Power Control Voltage DCS/PCS Ground Power Control Voltage GSM GSM RF Input Regulated Supply GSM VCC to stages 1 & 2 and bias circuits for GSM Ground Ground Ground Ground
PIN 12 13 14 15 16 17 18 19 20 21 22
NAME GSM_OUT GND GND GND DCS/PCS_ OUT VCCB GND GND GND VCCA_
DCS/PCS
DESCRIPTION GSM RF Output Ground Ground Ground DCS/PCS RF Output Final stage Supply Voltage Ground Ground Ground VCC to stages 1 & 2 and bias circuits for DCS/PCS Regulated Supply DCS/PCS
GND VAPC_GSM GSM_IN VREG_GSM VCCA_GSM GND GND GND GND
VREG_
DCS/PCS
8
Advanced Product Information - Rev 0.7 02-2003
AWT6123 Figure 5: Package Drawing
P22
P21
P20
P19
P18
P17
P1 P2 P3 P4 P5
P16 P15 P14 P13 P12
P6
P7
P8
P9
P10
P11
TOP VIEW (X-RAY)
P17 P18 P19 P20 P21 P22
P16 P15 P14 P13 P12
P1 P2 P3 P4 P5
P11
P10
P9
P8
P7
P6
TOP VIEW
SIDE VIEW BOTTOM VIEW
Advanced Product Information - Rev 0.7 02-2003
9
AWT6123
ANADIGICS, Inc.
141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product's formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders.
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited.
10
Advanced Product Information - Rev 0.7 02-2003


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